Abstract
An attempt is made to derive a generalized expression of the Einstein relation for the diffusivity-mobility ratio of the carries is n-channel inversion layers on ternary chalcopyrite semiconductors in the presence of a dc quantizing magnetic field, taking n-channel CdGeAs 2 as an example. It is found, on the basis of a newly derived dispersion relation of the conduction electrons of the above class of semiconductors which includes various types of anisotropies in the energy spectrum, that the Einstein relation exhibits an oscillatory magnetic field dependence and the oscillatory spikes are much sharper with large numerical magnitudes even in the presence of broadening in inversion layers in contrast to those obtained for bulk semiconductors under magnetic quantization.
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