Theoretical Analysis of the Effective Electron Mass in n‐Channel Inversion Layers on Ternary Chalcopyrite Semiconductors

Abstract

AbstractAn attempt is made to derive expressions of the effective electron masses in n‐channel inversion layers on ternary chalcopyrite semiconductors, taking n‐channel inversion layers on CdGeAs2 as examples, under both the weak and strong electric field limits. It is found, on the basis of newly derived 2D electron energy spectra for both the limits by considering the various types of band‐anisotropies, that the effective electron masses at the Fermi level depend on the electric sub‐band index due to the combined influence of the crystal field splitting, the anisotropic spin—orbit splitting parameter, and the band non‐parabolicity. The anisotropy parameters enhances the numerical values of the effective Fermi level masses for both the limits for relatively low values of the surface fields. Besides, the corresponding results for the isotropic three band Kane model are also obtained from the expressions derived.