Abstract
A theoretical study has been carried out on the effect of Radiation upon the electrical properties of silicon power diodes. Computer program “PDIORAD” is developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction. The model is analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length are seriously affected leading to a large increase in the forward voltage. These effects are found to be function of radiation type, fluence and energy.
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