Abstract
<p class="Style1">A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2013" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction.. The model was analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.</p>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Power Electronics and Drive Systems (IJPEDS)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
