Abstract
Au x Ti100 − x /n-Si Schottky diodes are fabricated and studied; in addition, the electrical properties of diodes containing metal films with varying composition (x = 0, 14, 30, 38, 60, 80, and 100) are also studied. Using X-ray phase analysis, it is established that the film of Au38Ti62 composition has the amorphous structure, while the remaining films Au x Ti100 − x possess the polycrystalline structure. The main parameters of the Schottky diodes are determined in relation to the composition and structure of the metal films. As a result, it is shown that the electrical properties of Au x Ti100 − x /n-Si Schottky diodes are related to variations in the composition and structure of metal films.
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