Abstract
Development synthesizing diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) to produce intrinsic diamond and built MSM device on the diamond film. The top and the bottom of diamond is Schottky junctions were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. After that, the result of detecting an X-ray of MSM diamond was satisfactory because it could respond along with increasing of intensity of an X-ray and X-ray expose time.
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