Abstract
Development Synthesizing Diamond film on (100) silicon substrate was processed by HFCVD (Hot Filament Chemical Vapor Deposition). The processes consisted of using methane (CH4) to produce intrinsic diamond and then constructing MSM device on the diaphragm of diamond film. Schotthy junctions on the top and the lower of the diaphragm were produced by aluminum which caused the carriers were able to move in the vertical direction to reduce the effect of grain boundaries. Then, the spectral response was investigated for the light wavelength in the range of 190 nm to 800 nm. The results showed that the device had good response to UV light and very low response to visible light. After that the device was sintered at 450°C in different times in order to find the decreased leakage current and proper response time.
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