The Use of Bismuth(III) Dithiocarbamato Complexes as Precursors for the Low-Pressure MOCVD of Bi2S3

Abstract

Communication: The potential use of Bi2S3 in thermoelectronic coolers and photodiode arrayshas attracted considerable interest recently. The successful deposition of Bi2S3 by low-pressure MOCVD is reported for the first time. The use of single-source precursors Bi(S2CNEt2)3 and Bi(S2CNMe-nHex)3 produces strongly adhered polycrystalline films on glass substrates at 400–450 °C. XPS and EDX analyses confirm that the deposited film surface is predominantly Bi2S3 and no elemental contamination is detected.