Abstract
The diffuse phase transition (DPT) and domain structure are essential to the functional properties of relaxor ferroelectrics and are extremely sensitive to the ion doping. The utilization of acceptor doping has been observed to be an effective method in enhancing the high-power properties of relaxor ferroelectric materials. The present study aims to examine the acceptor-doped DPT and domain structure in single crystals of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3. An unexpected physical phenomenon was identified in which Mn-doping increased dielectric diffusion and lowered domain size while suppressing dielectric relaxation. Traceability investigations suggest that Mn-doping inhibited the growth of polar nanoregions by enhancing random electric fields, which increases dielectric diffusion while decreasing the domain size. Meanwhile, Mn doping redistributes the relaxation time function, which results in a reduction in dielectric relaxation. The current research deepens the understanding of the physical basis of DPT and can be applied to the development of high-performance piezoelectric materials.
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