The ultrafast phase-change memory with high-thermal stability based on SiC-doped antimony

Abstract

The contradictory between switching speed and thermal stability has long been a huge challenge for phase-change memory applications. For providing a feasible solution, the rapid-phase-transition material — pure antimony, was incorporated with silicon carbide to complement their advantages. The characterization results elucidate that dopants situated in the grain boundary inhibit the crystal growth and enhance the stability of the temperature-sensitive amorphous state. Convincingly for devices, an ultrafast speed of 7ns, an operational voltage requirement of only 1.0V, a high endurance of more than 200K and a long data retention are all demonstrated to be realizable and repeatable.