Abstract
Compared with Ge2Sb2Te5, Ti-doped Ge2Sb2Te5 has better amorphous thermal stability (activation energy of 4.65 eV) and data retention (165°C for 10-year). The crystallization is restrained by the added Ti atoms with smaller grains. A faster SET/RESET switching speed (12 ns) and a lower RESET voltage (2.67 V) are obtained. The results indicate that Ti-doped Ge2Sb2Te5 material has the excellent potential for high-density application in phase change memory.
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