Abstract
Compared with pure Antimony (Sb) materials, Cerium (Ce) doped Sb alloys is proved to be a promising candidate with better thermal stability for phase change memory application. In this paper, the Ce doped Sb films were synthesized by magnetron sputtering. The crystallization temperature (Tc), activation energy (Ea) and the temperature for 10 years data retention (Tten) all increased significantly by increasing Ce dopants, meaning a much better thermal stability. These results may ascribe to disturbing crystallization process from the existence of Ce–Sb bond.
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