Abstract
The transition from As-doped GaN showing strong blue emission (∼2.6 eV) at room temperature to the formation of GaN1—xAsx alloys for films grown by molecular beam epitaxy was investigated. This study demonstrates that with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1—xAsx alloy films. Several possible models, which can explain how this might occur are presented.
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