The transition from As-doped GaN, showing blue emission, to GaNAs alloys in films grown by molecular beam epitaxy

Abstract

We have studied the transition from As-doped GaN showing strong blue emission (∼2.6 eV) at room temperature to the formation of GaN 1− x As x alloys for films grown by plasma-assisted molecular beam epitaxy. We have demonstrated that with increasing N-to-Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN 1− x As x alloy films. We present a model based on thermodynamic considerations, which can explain how this might occur.