Abstract
Zinc‑antimony binary system is an intermediate temperature thermoelectric material with great development prospects. In this work, Zn target and Sb target were jointed to form a composite target which was used for preparing zinc antimonide thin films by ion beam sputtering deposition method. When the target was combined by Zn and Sb strips following 1/1 cycle, and the thin films were annealed at 275 °C, 300 °C, 325 °C, 350 °C and 375 °C separately, the main component of the films is ZnSb. The test results show that certain annealing temperature is conducive to the crystallization of the film. The maximum power factor of 0.4 Wm−1 K−2 was achieved at 275 °C when the thin film annealed at 375 °C. When the target was combined by Zn and Sb strips following 1/1/2/1 cycle, the film (T1) has main Zn4Sb3 phase and be rich in Zn. The composition of the film can be regulated by controlling the content of elements in the target.
Published Version
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