Abstract

A novel model of two temperatures in generalized thermoelasticity theory in the context of the photothermal transport process is studied. The medium is excited at the free surface of semi-infinite semiconductor by normal load subjected to pulsed laser during refined multi-phase-lag thermal memory of heat conduction equation. All coupled between multi-waves such as thermal, elastic, and plasma waves are investigated. The exact solutions of main physical fields in this investigation are obtained analytically in two dimensions using the normal mode technique. Some mechanical and thermal loads are applied on the free surface of the medium. Some comparisons of the numerical results are shown. All physical fields are very sensitive to the variation of the laser pulses and two temperatures’ parameter. The influence of thermoelectric coupling parameter and thermal memory of physical fields of silicon (Si) material have been displayed graphically and discussed to illustrate the physical meaning of the problem.

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