Abstract
Electro-magnetic-thermal-microstretch elastic mathematical-physical model of semiconductor medium is investigated. The governing equations are studied in the context of photo-thermoelasticity theory during photothermal transport process. The semiconductor medium is exposed to an external magnetic field and a beam of laser. The coupled between electromagnetic field, thermal, elastic and plasma waves when the inertia-microstretch properties of elastic semiconductor material is taken into account. The main physical quantities are taken during two dimensions (2D) electronic-elastic deformation. The microinertia of microelement under the impact of external magnetic field is taken into consideration. The harmonic wave solutions in 2D with time variation is used to obtain the main physical fields. To obtain the complete solutions of the physical fields, some mechanical-thermal-elastic and plasma conditions for the semiconductor medium are taken at the boundary. The physical constants of the silicon (Si) material are used to make the numerical simulations and obtained the physical variables with the horizontal distance graphically. Many comparisons are made according to the thermal memories and the magnetic field influence.
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