Abstract
Purpose This paper aims to study photothermal excitation process in an initially stressed semi-infinite double porous thermoelastic semiconductor with voids subjected to Eringen’s nonlocal elasticity theory under the fractional order triple-phase-lag thermoelasticity theory. The considered substrate is governed by the mechanical and thermal loads at the free surface. Design/methodology/approach The normal mode technique is used to carry out the investigation of photothermal transportation. By virtue of the MATHEMATICA software, each distribution is exhibited graphically. Findings The expressions of the displacements, temperature, volume fractions of both kinds of voids, carrier density and stresses are determined analytically. With the help of the numerical data for silicon (Si) material, graphical implementations are presented on the basis of initial stress, fractional order, nonlocality and thermoelectric coupling parameters. Originality/value The present study fabricates the association of Eringen’s nonlocal theory and the stress analysis in a semiconducting double porous thermoelastic material with voids, which significantly implies the originality of the conducted work.
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