The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons

Abstract

We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate that at proton energies where direct ionization dominates, critical charge (Qcrit) plays a far bigger role than at proton energies above the nuclear reaction threshold.