Abstract
The relationship between deposition conditions of TiN film deposited by arc ion plating and the resultant structure was investigated by X-ray diffraction. Bias voltage was varied systematically in order to clarify the effect of such a variation on the final structure of TiN films. At low bias voltage, the resultant TiN film exhibited strong {1 1 0} preferred orientation, whereas at high bias voltage, the dominant orientation of the film was {1 1 1}. The ratio of nitrogen, carbon, and oxygen to titanium at the film surface and the interface between the film and substrate was determined by X-ray photoelectron spectroscopy (XPS), revealing that the maximum N/Ti ratio is approximately 0.89 in TiN films that exhibit {1 1 0} and {1 1 1} preferred orientation on the film surface. Titanium oxides such as TiO 2 or TiO were observed at the interface between the film and substrate in {1 1 0} oriented films, however these oxides were not observed in {1 1 1} orientated films.
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