Dependence to processing conditions of structure in TiN films deposited by arc ion plating

Abstract

The relationship between deposited parameters of TiN film deposited by arc ion plating and the resulting crystallographic structure are investigated by X-ray diffraction for substrates oriented parallel with and perpendicular to the titanium target. Bias voltage and substrate orientation are varied systematically to determine the effects of such variations on the final structure and surface morphology of the TiN films. The TiN film prepared using a parallel oriented substrate and a bias voltage of 0 V is found to exhibit strong {1 1 0} preferred orientation, whereas at high bias voltages, the dominant orientation of the film is {1 1 1}. For perpendicular oriented substrates, however, the 0 V bias voltage TiN film is found to exhibit random orientation. And for a bias voltage of −10 V, the TiN film is found to exhibit strong {1 1 0} preferred orientation, whereas at high bias voltage, the film exhibits {1 1 1} preferred orientation. The ratio of nitrogen, carbon, and oxygen to titanium at the film surface and the interface between the film and substrate is determined by X-ray photoelectron spectroscopy. Titanium oxides, including TiO 2 and TiO, are observed at the interface between the film and substrate in the TiN film deposited with a bias voltage of 0 V for both substrate orientations, however these oxides are not observed in films deposited at a bias voltage of −10 V.