Abstract
Abstract : A new approach for characterizing super-lattice structures has been developed which uses REM to examine the layer quality rather then conventional TEM. The technique developed by Alexander to deform Si at low temperatures has been applied for the first time to GaAs. The results are complimentary to those of Maeda and Takeuchi, but are much higher spatial resolution. This technique has been extended to the technologically important case of the superlattice by actually deforming a series of superlattice structures at these same low (150 C) temperatures. Finally a new approach has been developed for growing bicrystals of GaAs using a Ge bicrystal as a substrate. Keywords include: Semiconductors, Gallium Arsenide, Grain Boundaries, Dislocations, Compound Semiconductors, Superlattice Structures, and Gallium Arsenide Bicrystals.
Published Version
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