Abstract
We have made self-consistent semi-empirical molecular orbital calculations for various possible self-interstitial geometries in diamond, both with and without lattice distortion. Total energies are obtained, not merely the sum of one-electron eigenvalues. The results show that the (100) split interstitial has the lowest formation energy, not the cubic, hexagonal or bond-centred forms favour previously.The nature of the interstitial does not support the local heating model of enhanced diffusion in the presence of recombination or ionisation. A Bourgoin-Corbett mechanism involving negative hexagonal and neutral split interstitials is possible, but the apparent stability of the negative hexagonal interstitial may be an artefact of the calculation. We suggest a local excitation model is appropriate in fourfold-coordinated semiconductors.
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