Abstract
In this study, 50 nm-thick ZrO2 thin films have been prepared on Si substrate by liquid delivery metal-organic chemical vapor deposition(LD-MOCVD) at 650°C. The structural characteristics of the samples were investigated by X-ray diffraction analysis and SEM respectively, showed a tetragonal phase and a high uniformity of ZrO2 films. The electrical properties were studied by C-V and I-V measurements on Au/ZrO2/Si Metal-Insulator-Semiconductor (MIS) structure. The dielectric constant of ZrO2 films was 15. The leakage current-voltage dependence showed 3 different conduction mechanisms, which were Poole-Frenkel conduction mechanism, Schottky emission mechanism or ohmic emission.
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