Abstract
This work reports on the structural and optical properties of multilayers composed of silicon dioxide(SiO2) and silicon rich silicon nitride (SRN) films. These nanometer scale layers have beenalternately deposited by electron cyclotron resonance plasma enhanced chemical vapordeposition (ECR-PECVD) on quartz and silicon (Si) substrates. The samples have thenbeen annealed at high temperature in order to obtain a crystallization of the Siatoms present in excess in the SRN films. The formation of crystalline Si hasbeen witnessed by high resolution transmission electron microscopy (HREM) andµ-Raman measurements. Estimation of the Si-nanocrystal (Si-nc) sizes was possible bycorrelating the Raman’s confinement model, the photoluminescence measurements andHREM imaging. The results clearly show that the band-gap of the Si-ncs formed can becontrolled by this multilayer approach.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call