The sources and behaviour of impurities in LPE-grown (Cd,Hg)Te layers on CdTe(111) substrates

Abstract

The sources of background impurities in LPE layers of (Cd,Hg)Te grown on CdTe(111) substrates are investigated using Spark-source mass spectrometry (SSMS) and secondary-ion mass spectrometry (SIMS). The principal sources of impurities were (i) the compounds HgTe and CdTe used in the LPE solution synthesis, (ii) the graphite sliding boat system and (iii) the CdTe substrate. The main impurities and their typical levels in the LPE layers were found to be Li (0.2 ppma), Na (0.3-1.0 ppma), Si (0.1-0.3 ppma), Cl (0.3-0.4 ppma) and K (0.03-0.06 ppma). To reduce the levels various changes in procedure were adopted such as cleaning of the graphite boat parts in aqua regia, the use of elemental starting materials (Hg, Cd, Te), substrate purification and the use of in-situ wash melts. The effect of Hg saturated isothermal annealing on the impurity concentrations and distribution has been studied, revealing rapid surface segregation of the Group IA impurities. The values of the distribution coefficients for several impurities have been calculated from the analytical results, these values being generally in good agreement with other published work.