Abstract
This paper presents an evaluation of source N+ pick-up influence on ESD/LU immunities for the 0.35μm 3.3V low-voltage pMOSFET devices. It is found that when the stripe number of source N+ pick-up increased, the trigger voltage (Vt1) and holding voltage (Vh) values will be increased, too. Finally, the It2 value of DUTPick-up×5 as compared with a DUTWo pick-up(reference group) is decreased by 10%. Therefore, it can be concluded that the contribution of source N+ pick-up for It2 was not remarkable and recommended in this 0.35μm 3.3V process. Additionally, the Vh value of DUTPick-up×5 as compared with a DUTWo pick-up(reference group) is increased by 9.4%, the source N+ pick-up process can effectively strengthen the latch-up immunity.
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