Abstract
A process-related design formula for the MOSFET series resistances is discussed, assuming a linear doping profile for graded junctions. The main process variable is the lateral doping gradient, whereas the LDD-dose has little effect. Calculated resistance values agree well with measured data, which have been extracted from the parameters of a new MOSFET circuit model. In the latter model the current and saturation voltage are expressed explicitly in terms of the series resistances.
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