Abstract
A new integrated methodology for the accurate extraction of source/drain (S/D) series resistance components with emphasis on the spreading and contact resistance elements is presented. For the first time, detailed extractions of lateral extension doping abruptness and silicide specific contact resistance are made directly from 90nm-node SOI MOSFET characterization. The spreading resistance due to the lateral doping gradient is found to be a key component contributing to total parasitics, and the doping gradient engineering and scaling of specific contact resistance must be employed to overcome this parasitic limitation in future nanoscale CMOS performance roadmap
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
