Abstract
In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm2/Vs, on-off ratio increased from 8.9 × 107 to 7.96 × 109, and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 °C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.
Highlights
In this study, we propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer
On the basis of these background examples, we suggest the SRD method using the spontaneous decomposition of the H2O2 solution and radical reaction on the highly hydrophilic oxide surface to decrease defects related to oxygen in amorphous oxide-based semiconductors (AOSs) film
The SRD was carried out by three steps that are comprised of UV irradiation to generate a defective surface, H2O2 treatment for radical doping, and thermal annealing
Summary
We propose a self-activated radical doping (SRD) method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. Many studies regarding the reduction of Vo without mobility deterioration, such as UV annealing[12] and high pressure oxygen annealing[13], are reported These methods can increase the metal oxide bond and decrease Vo by chemical oxidation but it requires a prolonged time (1–2 hours) and additional external energy source. On the basis of these background examples, we suggest the SRD method using the spontaneous decomposition of the H2O2 solution and radical reaction on the highly hydrophilic oxide surface to decrease defects related to oxygen in AOSs film We investigated this SRD effect for radical oxidation through electrical characteristics and stability, and conducted chemical analysis using X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR)
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