Abstract
In this paper, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using carbon nanotubes (CNTs) as source/drain/gate electrodes have been proposed and experimentally realized. Effect of the annealing temperature on the contact properties between a-IGZO and single-walled carbon nanotube (SWNT) electrodes, as well as the electrical properties of the a-IGZO TFTs have been investigated. The contact performance between SWNT electrodes and a-IGZO active layer has been improved by increasing the annealing temperature. The resulting a-IGZO TFT with SWNT electrodes shows an effective mobility of 8 cm2/ $\text{V}\cdot {\mathrm{ s}}$ and an on/off current ratio of $1.9\times 10^{7}$ under a drain voltage of 10 V. This SWNT-electrode a-IGZO TFT design makes it possible for CNTs as electrodes of the metal oxide TFT.
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