Effect of top gate bias on NBIS in dual gate a-IGZO TFTs

Abstract

We report the effects of top gate bias (V TG ) on negative bias illumination stress (NBIS) applied at bottom gate terminal in dual gate amorphous indium gallium zinc oxide (a-IGZO) thin film transistor (TFT), while transfer characteristics measured at bottom gate terminal before and after stress. NBIS in a-IGZO TFTs show negative transfer shift due to the formation of positive charges, likely ionization of oxygen vacancies (V O → V O +/V O 2+) and/or hole traps in Gate insulator/a-IGZO interface and a-IGZO bulk. We observed −3.26V shift after NBIS, for −10V bias at VTG, which decreases to −1.3V for V TG = +10V. It clearly revels the formation of less defects in IGZO channel when the Fermi level is shifted upward by positive top gate bias.