Abstract
Thin polyimide films were deposited for hole blocking layer of EL device by the novel physical vapor deposition method, Ionized Cluster Beam Deposition (ICB). EL devices of Glass/ITO/PI/BEH-PPV/Al structure using spin coating and the ICB deposition technique were fabricated. By inserting a PI interlayer with various thickness and packing density, I– V and I– L characteristics, electroluminescence spectra and quantum efficiency of the devices were investigated in order to determine the role of the PI interlayer between ITO and BEH-PPV.
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