Abstract
The availability of active arsenic sites for the decomposition of trimethylgallium (TMGa) during the MOMBE (metalorganic molecular beam epitaxy) growth of GaAs using As 2 has been investigated using RHEED (reflection high electron energy diffraction) intensity oscillations. Changes in the oscillation period are observed at low effective V/III flux ratios at substrate temperatures between 500 and 580°C. The period immediately following the initiation of growth is shorter than the period in the latter part when steady state is achieved. These results indicate that the TMGa decomposition efficiency is strongly affected by the surface chemistry induced by excess arsenic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
