Abstract
We report an in situ dynamic method for the determination of the surface concentration of adsorbed arsenic in the metalorganic molecular beam epitaxial growth of GaAs from trimethylgallium (TMGa) and As2. Changes in the reflection high electron energy diffraction intensity oscillation period are observed under arsenic limited conditions, in which the decomposition of TMGa is strongly mediated by adsorbed arsenic. The period of the oscillations at the onset of growth indicates a time dependence in which the period gradually increases from the first oscillation to a steady state value after the growth of several monolayers. The results are interpreted as being due to an initial excess arsenic coverage which acts as a secondary source in this growth regime.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
