Abstract
A study of the growth of GaAs in the metal organic chemical vapour deposition system over a wide range of temperatures (743–1023 K) and AsH 3 to trimethylgallium (TMG) pressure ratios (6–40) shows that the process is not affected by the addition of CH 4 to the gas phase. This holds true not only for the rate of deposition but also for the morphology of the films and their electrical and photoluminescence characteristics. It is argued that this result is a direct consequence of the stability of the CH 4 molecule. The incorporation of carbon during film growth most likely takes place via adsorbed CH 3 radicals, and their decomposition products, arising from the dissociation of TMG.
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