Abstract
The nonlinear accumulation of the photogenerated electrons in high field biased SI-GaAs has been defined as photo activated charge domain (PACD). The transient transport dynamics of the PACD is investigated. The result shows that the PACD, working as a reverse gun dipole domain when biased electric field much higher than 4 kV/cm, and the reverse mode of the PACD could dominate the electric field shielding by its main electric field ultrafast and exponential rising against the bias field. Such mechanisms could play an important role in GaAs THz antenna, GaAs photoconductive semiconductor switch, and the other ultrafast GaAs devices.
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