The resistivity, temperature coefficient of resistivity and thermoelectric power of thin continuous metal films II: A methodology for computer processing of thin film data to extract parameters with associated error estimates

Abstract

A straightforward computer-based general methodology is presented which will enable parameter values and associated error estimates to be extracted from experimental thin film data points. The methodology operates on exact thin film relationships and overcomes problems in interpreting results, such as having to resort to the use of approximate thin film relationships. The methodology is presented within the framework of the well-known Fuchs-Sondheimer model for conduction in thin continuous metal films. However, its general nature means that it is equally applicable to other theoretical thin film models. An illustration of the methodology's use is given by applying it to a set of thin film resistive, temperature coefficient of resistivity and thermoelectric power data obtained from measurements on thin continuous copper films.