The resistance switching of BiFeO3-Nia/b/La0.7Sr0.3MnO3 was enhanced by regulating the ferroelectric polarization

Abstract

Bi0.89Ho0.08Sr0.03Fe0.97-xMn0.03Nia/bO3/La0.7Sr0.3MnO3(BiFeO3-Nia/b/LSMO), (Nia/b, a≠b a, b ∈ x, x = 0.01–0.04) films were successfully prepared by the wet chemical method. The results show that the change of the structure makes the interface conductivity of the upper layer and the bottom layer different, which results in the difference of the polarization. Ferroelectric polarization leads to changes in the thickness of the interface depletion layer and the height of the interface barrier, thereby improving the resistance switching behavior of the BiFeO3-Nia/b/LSMO film. The ferroelectric polarization of Ni0.03/0.01/LSMO film has a large difference under different electric field, resulting in a significant difference between the high and low resistance states. The Ni0.03/0.01/LSMO film achieves a high resistance switching ratio, as high as 39. Finally, the BiFeO3-Nia/b/LSMO superlattice composite film realized the multi-functionalization of the BiFeO3 film, which provides the possibility for the application of polymorphic non-volatile storage devices.