Abstract
The IC industry in the Chinese mainland has encountered the difficulty caused by the embargo on lithography machines in developing state-of-the-art semiconductor IC processes. For the first time, this work fabricates out the HVTFET which we have independent intellectual property rights. A 50 nm channel length N HVTFET device is fabricated successfully using a 0.35 µm process, and its characteristics are close to those of TSMC’s 55 nm planar N MOSFET. The experimental results of this paper have two important significances. First, it shows that the fabrication of the advanced ICs in the Chinese mainland can get rid of the limitation of the lithography machine by using the HVTFET. Second, it shows that it is possible to decrease the chip area by about 3/4 by using the HVTFET structure for the ICs with 28 nm and above planar MOS processes, which are quite common in China.
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