Abstract
In this paper, a 220 GHz monolithic power amplifier (PA) is presented by using InP heterojunction bipolar transistor (HBT) technology. A cascode constituted by common emitter and common base InP HBTs is employed due to its superior high-frequency maximum stable gain (MSG). The result shows that a two-stage monolithic microwave integrated circuit (MMIC) power amplifier using an emitter width 0.5 um Indium Phosphide HBT technology can demonstrate 14dB small signal gain.
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