Abstract
It is shown that plasma-enhanced chemical-vapor deposition of SiO 2 antireflective layer can result in significant reduction of the recovery time of semiconductor saturable absorber mirror (SESAM). The results were compared to the SESAM structure capped by SiN X layer and native oxide. The recovery time of the SESAM devices was characterized by pump-probe measurements. We have obtained recovery times of 25 ps, 11 ps and 2.6 ps for native oxide, SiN X and SiO 2 layers, respectively. These results can be explained by differences in the density of surface states which exist after passivation processes. Using SESAM with an SiO 2 antireflective cap layer, we have demonstrated a mode-locked diode-pumped Yb:KY(WO 4) 2 laser generating near band-width limited pulses. We have used the passivation process to reduce the pulse duration.
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