Abstract
Summary form only given. We report, to our knowledge, the first semiconductor saturable absorber mirror (SESAM) mode-locked Yb:YAl/sub 3/(BO/sub 3/)/sub 4/ (Yb:YAB) laser. Apart from a fluorescence bandwidth of 20 nm, Yb:YAB has a second-order nonlinear coefficient of d/sub eff/ > 1.4 pm/V/sup 4/. With its quasi three-level energy scheme, an upper state lifetime of /spl tau//sub u/ = 0.68 ms and gain cross-section of /spl sigma//sub c/ = 0.8 /spl times/ 10/sup -20/ cm/sup 2/, Yb:YAB requires high brightness pumping and picosecond SESAM response for stable cw mode-locking. We have developed an approach involving ion-implantation and annealing of SESAMs. This versatile process enables response time tailoring on the single device level. The SESAM used in the Yb:YAB laser is shown. A half-wave layer of GaAs, grown upon a semiconductor Bragg-mirror (/spl lambda//sub B/ = 1040 nm), contained three 9.5 nm In/sub 0.26/Ga/sub 0.74/As quantum-wells QW) at the anti-node of the standing-wave intensity distribution.
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