Abstract
An investigation was made of the fundamental electrical properties of diodes prepared by the precipitation of gold on mechanically polished and chemically etched surfaces of n-type CdTe monocrystals. The forward I–U characteristics measured in the temperature range from 210 to 300 K can be explained by Schottky's theory of metal–semiconductor junction with recombination in the space charge region. The reverse I–U characteristics are in good agreement with Schottky's theory at room temperature only. At lower temperatures a strong increase of the current with increasing voltage was observed. This effect may be explained by the current tunnelling through the high resistivity layer formed between the metal and the semiconductor. [Russian Text Ignored].
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