The preparation of (001) textured diamond films with large areas

Abstract

The (001)-textured diamond films were deposited on a 4-inch Si wafer by a three-step method. First, fine diamond powder was seeded on the substrate by a dipping method to obtain high diamond nuclei density and low interface state density. Then a H ion etching and annealing was performed for 1 h by setting an electric potential of −120 V to improve the adhesion between diamond and substrate and obtain high (001)-textured films. At last, diamond films were deposited under the condition for (001)-textured growth. A SEM was used to analyze the morphology of diamond crystallites and the film formed with the above three steps and Raman spectra was applied to obtain the phase purity of the films. The results show that large area, low interface state density, uniform and (001)-textured diamond films can be synthesized by this three-step process.