The physical characterization of the (111) and (100) textured diamond films synthesized by two optimal conditions

Abstract

The polycrystalline diamond films were deposited on silicon substrates by the microwave plasma chemical vapor deposition (MPCVD) system. Two kinds of pretreatment techniques, diamond paste nucleation method and diamond powder/photoresist mixture nucleation method, under two optimal synthesis conditions were used respectively, for 1 in. and 4 in. diameter polycrystalline diamond films on silicon substrates. It was found that the diamond film texture was toward (111) face, which was pretreated on the 1" diameter silicon by the diamond paste nucleation method, under the high temperature and high pressure condition and no oxygen (O) signal was detected for the as-deposited undoped diamond film. The (100) textured diamond film, which was pretreated on the 4" diameter silicon by the diamond powder/photoresist mixture nucleation method, was synthesized under the low temperature and low pressure condition, the oxygen (O) signal was observed for the as-deposited undoped diamond film. After deposition, the polycrystalline diamond films were doped by boron ion implantation (80 Kev, 5 × 10 15 cm −2) and were annealed under 800°C) in N 2 for 1 h. The qualities of the (111) and (100) textured diamond films were both degraded after the boron ion implantation. The oxidized phenomena increased a lot for the undoped and the boron-doped diamond films which were annealed at 800°C for both of the (111) and (100) textured diamond films. However, the qualities of the (111) undoped and boron-doped diamond films were found to be improved after the high temperature annealing process. For the (100) undoped and boron-doped diamond films, on the contrary, the diamond films were degraded after the high temperature annealing process.