Abstract
Reproducible and high quality N-doped ZnO (ZnO:N) films were achieved by a hydrothermal treatment method. The ZnO:N films exhibited p-type characteristics by means of the Hall-effect and the photoluminescence measurements. At room temperature, the electrical properties of ZnO:N film showed a hole concentration of 1×1016 cm−3 and hole mobility of 8.6 cm2 V−1 s−1. At 83 K two acceptor related emission peaks could be observed located at 3.353 and 3.237 eV, which were assigned to the acceptor-bound exciton and the donor-acceptor pair emissions. This result gave a direct evidence for the generation of the acceptor energy level after the hydrothermal treatment process. Also, a ZnO homojunction diode was fabricated by this method, which displayed a good rectification characteristic at room temperature. This study revealed that the hydrothermal treatment method was effective and practicable in producing p-type ZnO.
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