Abstract
The uniform deposition of the oxide nitride oxide (ONO) film on the tunnel-structured polysilicon electrodes was examined by measuring the electrical characteristics of the capacitor and by using transmission electron microscopy. The conventional low pressure chemical vapor deposition method was adopted for the deposition of the nitride film of the ONO. The tunnel length is varied from 1.6 to 15.6 μm. The ONO film deposited over the entire tunnel of 15.6 μm showed good electrical characteristics, and the thickness uniformity as well. In addition to the maximum tunnel length which can accommodate the uniform ONO deposition, the growth mechanism of the ONO film inside of the tunnel is discussed.
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