Abstract
The effects of the oxidation process on the electrical characteristics of metal–oxide–semiconductor (MOS) capacitors were studied. It was found that electrical and time dependent dielectric breakdown (TDDB) characteristics are improved for the MOS capacitor with a wet oxidized nitride film over the N2O oxidized nitride film. The depth profile of the oxidized nitride film is also studied by Auger electron spectroscopy. It is observed that from the top surface of an oxidized nitride film of about 2 nm (nitride film oxidized in the wet oxidation process or in N2O ambient by rapid thermal processing), the level of oxygen is the same but, compared to a N2O oxidized nitride film, the level of nitrogen is greater in a wet oxidized nitride film. The improvement of the electrical and TDDB characteristics of the wet oxidized nitride film over the N2O oxidized nitride can be thought due to the increased amount of nitrogen from the top surface to a depth of nearly 2 nm of the oxidize nitride films.
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