Abstract
AbstractIn this paper we develop a mathematical model describing the oxidation process of silicon. At first we introduce a model with a sharp reaction front between the silicon and the oxide layer. From this we turn over to a phase field model where the reaction front is replaced by an extended reaction zone. The silicon dioxide and the silicon are regarded as components of a reacting mixture, and the oxygen is assumed to be dissolved in it. We formulate a local existence result of that second model in three space dimensions assuming some simplifications concerning the boundary conditions and solve the complete free boundary value problem numerically. For this, it has been implemented into the process simulator DIOS which allows two‐dimensional computations.
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